PFIB- SEM dual beam system with UHR SEM - XEIA

New UHR SEM/PFIB workstation
 

Whether your applications demand extremely powerful and ultra-fast micro-/nano- FIB machining, an outstanding image resolution at low beam energies, ultra-fast and reliable microanalysis or 3D analytical reconstructions, XEIA3 stands out as the ideal turnkey solution that offers all these capabilities in one single and unique instrument with ultimate performance.

With the new immersion lens SEM column, Model 2016 (Triglav technology) and the new high resolution PFIB column this system configuration becomes unbeatable and opens up new possibilities.


KEY FEATURES
 

  • ‚‚ Powerful SEM column equipped with a high brightness Schottky emitter for high currents, low-noise and extraordinary imaging
  • ‚‚ In-Beam detectors for high signaling and excellent imaging at very short working distances
  • ‚‚ Ultra-fast xenon plasma ion source FIB. High beam currents for outstanding milling speeds and an excellent performance in removing large volumes of material, and low beam currents for smooth polishing
  • ‚‚ Ultra-low electron landing energy imaging enabled by the Beam Deceleration Technology (BDT)
  • ‚‚ Less implantation, doping or degradation of insulator deposition a valuable feature for semiconductor industry
  • ‚‚ Simultaneous SEM imaging during FIB milling or deposition (two independent scan generators)
  • ‚‚ Unique and advanced TESCAN’s technologies in terms of automated operations such as the In-Flight Beam TracingTM designed to accurately compute and adjust all the optimal parameters (WD, magnification, etc.) for high resolution imaging
  • ‚‚ Advanced patterning and 3D characterisations capabilities powered by DrawBeam, a pattern editing tool that also provides a real-time visualization during milling or lithographic processes
  • ‚‚ Novel solution for fast 3-dimensional microanalysis such as 3D EDX and EBSD reconstructions
  • ‚‚ Unique integration with TOF-SIMS and scanning probe microscope ‚ 12’’ wafer inspection by means of an extended chamber size for enabling 6’’, 8’’ and 12’’ wafer inspection. 12’’ wafer inspection is an exclusive feature of TESCAN equipment
  • ‚‚ Gas Injection System (GIS) for enhancing your FIB applications
  • ‚‚ High-performance electronics for faster image acquisition up to 20 ns/pxl, excellent deposition rate and an ultra-fast scanning
  • ‚‚ Powerful turbomolecular and dry fore vacuum pump for keeping the chamber clean. Electron gun pumping by ion getter pump

 

Materials science

Xe plasma source provides great advantages for making the most of chemical and compositional analytical techniques such as energy and wavelength dispersive X-ray spectroscopy, 3D EDX and 3D EBSD reconstructions as well as full integration with TOF-SIMS for achieving superior resolution in surface analysis. XEIA3 is an extraordinary robust analytical platform with far reaching research potential in materials science.

  • ‚‚ Research in new materials and their characterisation
  • ‚‚ Study of non-conductive materials such as crystals, ceramics and polymers
  • ‚‚ Patterning of complex nanostructures


Life Sciences

XEIA3 superb imaging capability designed with respect to imaging a wide variety of sensitive biological samples in their natural state. This represents a great advantage as no coatings or chemical fixing of these types of samples is needed, therefore the whole analysis
process is much simpler.

  • Microbiology
  • Biomedical engineering
  • Cell and tissue biology
  • Cellular analysis
  • Pharmaceutics
  • Study of dynamic processes such as crystallization or dissolution of substance
  • ‚‚Study of particle properties such as the particle size, porosity, structure and contaminants

Semiconductors and Microelectronics

The powerful Xe plasma ion column makes XEIA3 the system of choice for the semiconductor and microelectronic industry. High currents for rough milling, ideal for lamella preparation or large cross sectioning; medium current for polishing and reducing surface artifacts (curtaining effect); small current for fine polishing of cross sections and lamellae. Ion lithography allows for better resolution in patterning.

 

Specific solutions for specific needs

With the launch of XEIA3, TESCAN not only delivers an instrument top of its class but also fulfils its commitment to continue helping researchers to push science and development forward. This is also reflected in the careful customisation of every system in order to meet specific needs. From materials sciences to life sciences or from engineering to semiconductor industry, TESCAN is ready to take up the challenges of the upcoming future. 

Extend the capabilities in all your FIB applications with Xe plasma ion source

The XEIA3 combines the capabilities of an outstandingly fast and powerful xenon plasma ion source with an ultra-high resolution electron column. Such synergy allows for carrying out the most challenging large volume removal applications in beating times which have – up until now – never been achievable before. For research or for high-tech industry the highest precision that only a sub-2 nanometre electron column is guaranteed and opens new possibilities in a wider range of applications. The high current capable plasma ion source allows for a wider range of applications.