Unique analytical platform for large-volume sample characterization and maximum universality in sample preparation

TESCAN S8000X is the most versatile and universal analytical Xe plasma FIB-SEM platform in the market enabling large-volume sample characterization and Ga-free sample preparation and modification. The combination of field-free UHR enabled by the BrightBeam™ SEM column and the powerful yet precise milling capabilities delivered by the new iFIB+™ Xe plasma FIB column, make the TESCAN S8000X the ideal platform for planar delayering, low-kV SEM inspection, and electrical nanoprobing of sub-20 nm node technologies.  Physical failure analysis of semiconductor devices that require large-volume sample FIB-processing, such as large-area cross-sectioning in packaging and MEMS, and large-scale 3D micro-characterization of any material are also target applications of the TESCAN S8000X.

TESCAN Xe Plasma FIB: combining power and precision in one single instrument Xe plasma FIB is a powerful microanalytical technique that
has completely revolutionized the landscape and scope of FIB applications not only in science but also in industry as a whole. What makes Xe plasma FIB so powerful is its capability to achieve very high ion beam currents while maintaining beam quality, a feature that makes it suitable for large-volume milling tasks and the ideal choice to keep up with high throughput and productivity demanded by fabs and semiconductor foundries. The TESCAN S8000X is fitted with the new iFIB+™ Xe+ plasma FIB capable of generating high ion beam currents and an unmatched field of view that redefines conventional large-area FIB cross-sectioning while slashing sample preparation time. The inert nature of Xe makes it the ideal ion specie to mill or to fabricate structures that require to be Ga-free to not interfere with subsequent measurements – this is the case of IC delayering processes that are followed by electrical nanoprobing, as well as fabrication of Hall probes and atom probe tips, or sample preparation in optoelectronic devices for the purposes of failure analysis.
„ Benefits:
  • Extensive ion beam current range gives incomparable FIB versatility
  • Up to 50 × faster milling rates than conventional Ga FIBs
  • Large FIB currents for fast milling rates without gas-assisted enhancement
  • Highly-localized and well-controlled sample modification and nanoengineering
  • Significant reduction in surface amorphisation and ion implantation
  • No intermetallic compounds formed during milling
  • Xe ions enhance detection limits in TOF-SIMS analysis
  • Shortest time-to-data, increased throughput, and productivity